SI4401BDY-T1-E3 Vishay, SI4401BDY-T1-E3 Datasheet - Page 3
![MOSFET P-CH 40V 8.7A 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4401BDY-T1-E3
Manufacturer Part Number
SI4401BDY-T1-E3
Description
MOSFET P-CH 40V 8.7A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4401BDY-T1-GE3.pdf
(6 pages)
Specifications of SI4401BDY-T1-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 10.5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
8.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
55nC @ 5V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.014 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8.7 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-8.7A
Drain Source Voltage Vds
-40V
On Resistance Rds(on)
21mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4401BDY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4401BDY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
24 887
Company:
Part Number:
SI4401BDY-T1-E3
Manufacturer:
NICCOMPHIA
Quantity:
30 000
Company:
Part Number:
SI4401BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI4401BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73140
S09-0866-Rev. D, 18-May-09
0.030
0.025
0.020
0.015
0.010
0.005
0.000
50
10
6
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 10.5 A
5
0.2
On-Resistance vs. Drain Current
= 15 V
10
V
V
T
GS
10
SD
J
Q
= 150 °C
= 4.5 V
g
- Source-to-Drain Voltage (V)
0.4
- Total Gate Charge (nC)
I
D
15
Gate Charge
- Drain Current (A)
20
0.6
20
30
25
0.8
V
T
GS
J
30
= 25 °C
= 10 V
40
1.0
35
1.2
40
50
4500
4000
3500
3000
2500
2000
1500
1000
0.05
0.04
0.03
0.02
0.01
0.00
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
5
GS
= 10.5 A
C
= 10 V
oss
2
V
V
10
DS
GS
T
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
15
C
Capacitance
25
iss
4
I
D
20
50
= 10.5 A
Vishay Siliconix
C
rss
Si4401BDY
6
25
75
www.vishay.com
100
30
8
125
35
40
150
10
3