SI7461DP-T1-GE3 Vishay, SI7461DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7461DP-T1-GE3
• Description: MOSFET P-CH 60V 8.6A PPAK 8SOIC
• Manufacturer: Vishay

Specifications of SI7461DP-T1-GE3

• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 11.5mohm
• Rds(on) Test Voltage Vgs: -10V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.5 mOhm @ 14.4A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Continuous Drain Current Id: -14.4A
• Threshold Voltage Vgs Typ: -3V
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7461DP-T1-GE3TR

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 72567
S10-2244-Rev. G, 04-Oct-10
0.020
0.016
0.012
0.008
0.004
0.000
10
70
10
8
6
4
2
0
1
0.0
0
0
V
GS
V
I
D
Source-Drain Diode Forward Voltage
DS
0.2
= 4.5 V
1 0
= 17 A
On-Resistance vs. Drain Current
2 5
= 30 V
V
SD
Q
g
- Source-to-Drain Voltage (V)
T
0.4
2 0
- Total Gate Charge (nC)
I
J
D
= 150 °C
- Drain Current (A)
5 0
Gate Charge
V
GS
0.6
3 0
= 10 V
7 5
0.8
4 0
T
J
= 25 °C
100
1.0
5 0
125
1.2
60
8000
7000
6000
5000
4000
3000
2000
1000
0.04
0.03
0.02
0.01
0.00
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
rss
D
-
= 14.4 A
V
I
D
25
C
GS
1 0
= 14.4 A
oss
= 10 V
2
V
V
DS
GS
0
T
J
- Drain-to-Source V oltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
2 0
Capacitance
25
C
4
iss
50
3 0
Vishay Siliconix
6
75
Si7461DP
4 0
www.vishay.com
100
8
5 0
125
150
10
60
3