IRFL9110TRPBF Vishay, IRFL9110TRPBF Datasheet

MOSFET P-CH 100V 1.1A SOT223

IRFL9110TRPBF

Manufacturer Part Number
IRFL9110TRPBF
Description
MOSFET P-CH 100V 1.1A SOT223
Manufacturer
Vishay
Datasheets

Specifications of IRFL9110TRPBF

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 660mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.7nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
1.2 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.1 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-1.1A
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IRFL9110PBFTR

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
IRFL9110TRPBF
Manufacturer:
VISHAY
Quantity:
150
Part Number:
IRFL9110TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFL9110TRPBF
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Part Number:
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Quantity:
70 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91196
S10-1257-Rev. D, 31-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Peak Diode Recovery dV/dt
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
≤ - 4.4 A, dI/dt ≤ - 75 A/μs, V
= - 25 V, starting T
D
(Ω)
SOT-223
G
D
a
S
a
J
= 25 °C, L = 7.7 mH, R
c
c
b
V
GS
DD
= - 10 V
e
≤ V
G
DS
P-Channel MOSFET
, T
e
Single
- 100
J
8.7
2.2
4.1
≤ 150 °C.
SOT-223
SiHFL9110-GE3
IRFL9110PbF
SiHFL9110-E3
IRFL9110
SiHFL9110
g
C
S
= 25 Ω, I
D
= 25 °C, unless otherwise noted)
Power MOSFET
V
GS
1.2
at - 10 V
AS
T
T
= - 4.4 A (see fig. 12).
C
A
for 10 s
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infrared, or wave soldering techniques. Its
unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
Definition
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
stg
SOT-223
SiHFL9110TR-GE3
IRFL9110TRPbF
SiHFL9110T-E3
IRFL9110TR
SiHFL9110T
IRFL9110, SiHFL9110
design,
- 55 to + 150
a
a
LIMIT
- 0.69
0.025
0.017
- 100
300
± 20
- 1.1
- 8.8
- 1.1
0.31
- 5.5
100
3.1
2.0
low
a
a
Vishay Siliconix
d
a
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRFL9110TRPBF Summary of contents

Page 1

... ° 100 ° ° °C A for Ω 4.4 A (see fig. 12 ≤ 150 ° IRFL9110, SiHFL9110 Vishay Siliconix device design, low on-resistance SOT-223 a SiHFL9110TR-GE3 a IRFL9110TRPbF a SiHFL9110T-E3 a IRFL9110TR a SiHFL9110T SYMBOL LIMIT V - 100 DS V ± 1 0. 8.8 DM 0.025 0.017 E 100 1 0. 2.0 dV/ ...

Page 2

... IRFL9110, SiHFL9110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics Fig Typical Output Characteristics Document Number: 91196 S10-1257-Rev. D, 31-May-10 IRFL9110, SiHFL9110 Vishay Siliconix Fig Typical Transfer Characteristics Fig Normalized On-Resistance vs. Temperature www.vishay.com 3 ...

Page 4

... IRFL9110, SiHFL9110 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91196 S10-1257-Rev. D, 31-May-10 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91196 S10-1257-Rev. D, 31-May-10 IRFL9110, SiHFL9110 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off Fig. 10b - Switching Time Waveforms www ...

Page 6

... IRFL9110, SiHFL9110 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91196. Document Number: 91196 S10-1257-Rev ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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