IRF820SPBF Vishay, IRF820SPBF Datasheet - Page 5

• Manufacturer Part Number: IRF820SPBF
• Description: MOSFET N-CH 500V 2.5A D2PAK
• Manufacturer: Vishay

Specifications of IRF820SPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 360pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF820SPBF

Document Number: 91060
S-83030-Rev. A, 19-Jan-09
91060_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
91060_11
2.5
2.0
1.5
1.0
0.5
0.0
25
10
0.1
10
-2
1
10
-5
0.05
0.02
0.01
50
D = 0.5
0.2
0.1
T
C
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
-4
100
Single Pulse
(Thermal Response)
125
10
t
-3
1
150
, Rectangular Pulse Duration (s)
10
-2
0.1
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
IRF820S, SIHF820S
DS
t
r
1
j
= P
P
DM
DM
D.U.T.
x Z
Vishay Siliconix
R
t
1
1
thJC
D
/t
t
2
d(off)
t
+ T
2
C
10
t
f
+
-
www.vishay.com
V
DD
5