IRF530STRLPBF Vishay, IRF530STRLPBF Datasheet - Page 4
![POWER MOSFET D2PAK](/photos/16/4/160475/to263ab_sml.jpg)
IRF530STRLPBF
Manufacturer Part Number
IRF530STRLPBF
Description
POWER MOSFET D2PAK
Manufacturer
Vishay
Datasheet
1.IRF530SPBF.pdf
(8 pages)
Specifications of IRF530STRLPBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
670pF @ 25V
Power - Max
88W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.16 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
3700 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
14A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
160mohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IRF530S, SiHF530S
Vishay Siliconix
www.vishay.com
4
91020_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
91020_06
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1400
1200
1000
800
600
400
200
20
16
12
0
8
4
0
10
0
0
I
D
= 14 A
V
DS ,
5
Q
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
DS
= 20 V
10
V
C
C
C
GS
iss
rss
oss
V
= C
= 0 V, f = 1 MHz
= C
= C
DS
10
gs
gd
= 50 V
ds
15
1
+ C
C
+ C
C
C
rss
V
iss
oss
gd
DS
gd
For test circuit
see figure 13
, C
= 80 V
ds
20
Shorted
25
91020_07
91020_08
10
10
10
10
Fig. 7 - Typical Source-Drain Diode Forward Voltage
0.1
10
0
3
2
1
5
2
5
2
5
2
5
2
1
0.4
0.1
Fig. 8 - Maximum Safe Operating Area
175
2
°
V
V
C
5
SD
DS
Operation in this area limited
0.8
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
1
2
25
T
Single Pulse
T
°
C
J
by R
C
= 175 °C
5
= 25 °C
1.2
10
DS(on)
2
S10-1442-Rev. B, 05-Jul-10
Document Number: 91020
5
1.6
10
100
1
10
10
2
V
ms
2
GS
ms
µs
µs
= 0 V
5
2.0
10
3