IRF530SPBF Vishay, IRF530SPBF Datasheet - Page 4

• Manufacturer Part Number: IRF530SPBF
• Description: POWER MOSFET D2PAK
• Manufacturer: Vishay

Specifications of IRF530SPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 670pF @ 25V
• Power - Max: 88W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 160mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF530S, SiHF530S
Vishay Siliconix
www.vishay.com
4
91020_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
91020_06
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1400
1200
1000
800
600
400
200
20
16
12
0
8
4
0
10
0
0
I
D
= 14 A
V
DS ,
5
Q
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
DS
= 20 V
10
V
C
C
C
GS
iss
rss
oss
V
= C
= 0 V, f = 1 MHz
= C
= C
DS
10
gs
gd
= 50 V
ds
15
1
+ C
C
+ C
C
C
rss
V
iss
oss
gd
DS
gd
For test circuit
see figure 13
, C
= 80 V
ds
20
Shorted
25
91020_07
91020_08
10
10
10
10
Fig. 7 - Typical Source-Drain Diode Forward Voltage
0.1
10
0
3
2
1
5
2
5
2
5
2
5
2
1
0.4
0.1
Fig. 8 - Maximum Safe Operating Area
175
2
°
V
V
C
5
SD
DS
Operation in this area limited
0.8
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
1
2
25
T
Single Pulse
T
°
C
J
by R
C
= 175 °C
5
= 25 °C
1.2
10
DS(on)
2
S10-1442-Rev. B, 05-Jul-10
Document Number: 91020
5
1.6
10
100
1
10
10
2
V
ms
2
GS
ms
µs
µs
= 0 V
5
2.0
10
3