IRF9Z14SPBF Vishay, IRF9Z14SPBF Datasheet - Page 4

• Manufacturer Part Number: IRF9Z14SPBF
• Description: MOSFET P-CH 60V 6.7A D2PAK
• Manufacturer: Vishay

Specifications of IRF9Z14SPBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.7 A
• Power Dissipation: 3700 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -6.7A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9Z14SPBF

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
www.vishay.com
4
91089_06
91089_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
600
480
360
240
120
20
16
12
8
4
0
0
10
0
I
0
D
= - 6.7 A
- V
DS ,
3
Q
G
, Total Gate Charge (nC)
Drain-to-Source Voltage (V)
6
V
V
C
C
C
DS
GS
iss
rss
oss
= C
= 0 V, f = 1 MHz
= C
= - 30 V
= C
10
gs
gd
ds
9
1
+ C
+ C
V
C
C
C
DS
gd
gd
iss
oss
rss
For test circuit
see figure 13
, C
= - 48 V
12
ds
Shorted
15
91089_07
91089_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
-1
1
0
2
5
2
5
2
1
1.0
1
Fig. 8 - Maximum Safe Operating Area
- V
- V
175
2
2.0
SD
DS
Operation in this area limited
°
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
C
5
3.0
T
T
Single Pulse
by R
C
J
= 175 °C
= 25 °C
10
25
DS(on)
°
S10-1728-Rev. B, 02-Aug-10
C
4.0
Document Number: 91089
2
5.0
V
GS
5
= 0 V
10
100
1
10
ms
µs
ms
10
6.0
µs
2