ZXM66P02N8TC Diodes Zetex, ZXM66P02N8TC Datasheet - Page 3

• Manufacturer Part Number: ZXM66P02N8TC
• Description: MOSFET P-CHAN 20V 8SOIC
• Manufacturer: Diodes Zetex

Specifications of ZXM66P02N8TC

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.4A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 43.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2068pF @ 15V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
ZXM66P02N8
Document Number DS31965 Rev. 2 - 2
1E-3
0.01
0.01
Typical Transfer Characteristics
0.1
0.1
0.1
500.0m
10
On-Resistance v Drain Current
1
1
1
0.1
-V
T = 25°C
GS
-V
-V
0.1
Output Characteristics
DS
GS
-I
T = 150°C
D
Drain-Source Voltage (V)
Gate-Source Voltage (V)
1.5V
1.0
Drain Current (A)
1
10V
4.5V
1.5
1
T = 25°C
2V
-V
10
DS
T = 25°C
2.5V
= 10V
2.5V
2V
1.5V
-V
www.diodes.com
4.5V
10V
GS
2.0
3 of 5
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
1E-3
0.01
0.01
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.1
10
10
1
1
-50
0.1
0.2
-V
-V
Tj Junction Temperature (°C)
Output Characteristics
DS
SD
T = 150°C
0
10V
Diodes Incorporated
Drain-Source Voltage (V)
Source-Drain Voltage (V)
0.4
A Product Line of
4.5V
1
V
I
D
50
GS
= -250uA
0.6
= V
2.5V
V
I
D
GS
DS
= - 3.2A
T = 25°C
= -4.5V
100
0.8
T = 150°C
ZXM66P02N8
10
R
V
1.5V
DS(on)
2V
GS(th)
-V
© Diodes Incorporated
1V
GS
150
1.0
October 2009