IRFRC20TRPBF Vishay, IRFRC20TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRFRC20TRPBF
• Description: MOSFET N-CH 600V 2A DPAK
• Manufacturer: Vishay

Specifications of IRFRC20TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 4.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 4.4 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 25 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 23 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IRFRC20PBFTR

IRFRC20, IRFUC20, SiHFRC20, SiHFUC20
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T
= 25 °C
Fig. 3 - Typical Transfer Characteristics
C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
C
Document Number: 91285
www.vishay.com
S10-1139-Rev. D, 17-May-10
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