IRFL210TRPBF Vishay, IRFL210TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRFL210TRPBF
• Description: MOSFET N-CH 200V 960MA SOT223
• Manufacturer: Vishay

Specifications of IRFL210TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 580mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 960mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 140pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 960mA
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 1.5 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.96 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IRFL210PBFTR

IRFL210, SiHFL210
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
www.vishay.com
2
Maximum Junction-to-Ambient
(PCB Mount)
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
DS
SD
DD
Temperature Coefficient
≤ 3.3 A, dI/dt ≤ 70 A/μs, V
= 50 V, starting T
a
J
= 25 °C, L = 81 mH, R
c
J
= 25 °C, unless otherwise noted)
DD
≤ V
DS
, T
J
e
≤ 150 °C.
SYMBOL
G
SYMBOL
ΔV
R
V
= 25 Ω, I
t
t
C
R
I
I
C
R
V
DS(on)
C
Q
Q
GS(th)
d(off)
GSS
DSS
d(on)
DS
g
Q
C
L
L
t
t
DS
oss
thJA
thJC
iss
rss
gs
gd
fs
r
f
D
S
g
/T
= 25 °C, unless otherwise noted)
J
AS
= 0.96 A (see fig. 12).
Between lead,
6 mm (0.25") from
package and center of
die contact
T
T
V
V
C
A
for 10 s
GS
GS
V
R
= 25 °C
= 25 °C
DS
g
Reference to 25 °C, I
= 10 V
= 10 V
MIN.
= 24 Ω, R
= 160 V, V
-
-
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TEST CONDITIONS
DD
DS
DS
DS
GS
= 100 V, I
= 200 V, V
= 50 V, I
= V
= 0 V, I
V
V
V
GS
DS
D
GS
GS
I
GS
D
= 30 Ω, see fig. 10
= ± 20 V
= 25 V,
, I
= 3.3 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
= 250 μA
I
D
= 250 μA
D
= 0.58 A
GS
SYMBOL
= 3.3 A,
= 0.58 A
T
dV/dt
D
TYP.
= 0 V
J
P
, T
J
= 1 mA
-
-
DS
D
= 125 °C
G
stg
= 160 V,
b
D
S
b
b
- 55 to + 150
MIN.
0.51
200
2.0
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
LIMIT
40
60
300
3.1
2.0
5.0
S10-1257-Rev. C, 31-May-10
d
Document Number: 91193
TYP.
0.30
140
8.2
8.9
4.0
6.0
53
15
17
14
-
-
-
-
-
-
-
-
-
-
MAX.
± 100
250
4.0
1.5
8.2
1.8
4.5
25
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
UNIT
V/ns
°C
W
UNIT
V/°C
nC
nH
nA
μA
pF
ns
Ω
S
V
V