SI2323DS-T1 Vishay, SI2323DS-T1 Datasheet
SI2323DS-T1
Specifications of SI2323DS-T1
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SI2323DS-T1 Summary of contents
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... Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 72024 S-22121—Rev. B, 25-Nov-02 New Product I (A) D -4.7 - 4.1 - 3.5 TO-236 (SOT-23 Top View Si2323DS (D3)* *Marking Code = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C 70_C ...
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... Si2323DS Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Drain-Source Breakdown Voltage V (BR)DSS Gate-Threshold Voltage V GS(th) Gate-Body Leakage I Zero Gate Voltage Drain Current I a On-State Drain Current I D(on) a Drain-Source On-Resistance r DS(on) a Forward Transconductance Diode Forward Voltage V b Dynamic Total Gate Charge ...
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... 600 300 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0 -50 Si2323DS Vishay Siliconix Transfer Characteristics T = -55_C C 25_C 125_C 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...
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... Si2323DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 = 140 0.3 0.2 0.1 0.0 -0.1 -0.2 -50 - Temperature (_C) J www.vishay.com 4 New Product 0.15 0.12 0. 25_C J 0.06 0.03 ...
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... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72024 S-22121—Rev. B, 25-Nov-02 New Product - Square Wave Pulse Duration (sec) Si2323DS Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120_C/W thJA ( thJA 4 ...
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