ZXM64N02XTC Diodes Zetex, ZXM64N02XTC Datasheet

MOSFET N-CHAN 20V MSOP8

ZXM64N02XTC

Manufacturer Part Number
ZXM64N02XTC
Description
MOSFET N-CHAN 20V MSOP8
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXM64N02XTC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 3.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.4A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 4.5V
Input Capacitance (ciss) @ Vds
1100pF @ 15V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
Issue 2 - February 2008
DEVICE
ZXM64N02XTA
ZXM64N02XTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ZXM64N02
=20V; R
REEL SIZE
(inches)
DS(ON)
13
7
=0.040
TAPE WIDTH (mm)
12mm embossed
12mm embossed
I
D
=5.4A
1
QUANTITY
PER REEL
1000 units
4000 units
G
S
S
S
ZXM64N02X
MSOP8
Top View
D
D
D
D

Related parts for ZXM64N02XTC

ZXM64N02XTC Summary of contents

Page 1

... Low gate drive Low profile SOIC package APPLICATIONS Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) ZXM64N02XTA 7 ZXM64N02XTC 13 DEVICE MARKING ZXM64N02 Issue 2 - February 2008 I =5.4A D TAPE WIDTH (mm) QUANTITY PER REEL 12mm embossed 1000 units 12mm embossed ...

Page 2

ZXM64N02X ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V =4.5V =4.5V Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T =25°C ...

Page 3

Refer Note ( 100ms 10ms 1ms 100us 100m 0 Drain-Source Voltage (V) DS Safe Operating Area Ref Note ( D=0.5 20 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 ...

Page 4

ZXM64N02X ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On ...

Page 5

V - Drain-Source Voltage (V) DS Output Characteristics 100 VDS=10V 10 T=150°C T=25°C 1 0.1 1 Gate-Source Voltage (V) GS Typical Transfer Characteristics 1 0.1 VGS=2.0V VGS=2.5V VGS=4.5V 0.01 0.1 ...

Page 6

ZXM64N02X 2000 1750 1500 1250 1000 750 500 250 0 0 Drain Source Voltage (V) DS Capacitance v Drain-Source Voltage Basic Gate Charge Waveform Switching Time Waveforms Issue 2 - February 2008 TYPICAL CHARACTERISTICS 6.0 Vgs=0V I ...

Page 7

ZXM64N02X PACKAGE DIMENSIONS Conforms to JEDEC MO-187 Iss A PAD LAYOUT DETAILS Zetex plc. Chadderton Technology Park, Chadderton, Oldham, OL9-9LL, United Kingdom. Telephone: (44)161 622 4422 ...

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