ZXMN2A02X8TC Diodes Zetex, ZXMN2A02X8TC Datasheet

MOSFET N-CH 20V 6.2A 8-MSOP

ZXMN2A02X8TC

Manufacturer Part Number
ZXMN2A02X8TC
Description
MOSFET N-CH 20V 6.2A 8-MSOP
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN2A02X8TC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 11A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.2A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
18.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
1900pF @ 10V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 2 - JANUARY 2005
DEVICE
ZXMN2A02X8TA
ZXMN2A02X8TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ZXMN
2A02
= 20V; R
DS(ON)
REEL
SIZE
13”
7”
= 0.02
WIDTH
12mm
12mm
TAPE
I
D
QUANTITY
1000 units
4000 units
= 7.8A
PER REEL
1
ZXMN2A02X8
PINOUT
Top View
MSOP8

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ZXMN2A02X8TC Summary of contents

Page 1

... Converters • Power Management Functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMN2A02X8TA 7” 12mm ZXMN2A02X8TC 13” 12mm DEVICE MARKING • ZXMN 2A02 ISSUE 2 - JANUARY 2005 I = 7.8A D QUANTITY PER REEL 1000 units 4000 units 1 ZXMN2A02X8 ...

Page 2

ZXMN2A02X8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V =10V =10V =10V Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) ...

Page 3

R DS(on) 10 Limited 100ms 100m 10ms 1ms Single Pulse T =25°C 10m amb 100m 1 V Drain-Source Voltage (V) DS Safe Operating Area 120 110 T =25°C amb 100 D=0 ...

Page 4

ZXMN2A02X8 ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time ...

Page 5

T = 25° 0.1 0 Drain-Source Voltage (V) DS Output Characteristics 150° Gate-Source Voltage (V) GS Typical Transfer Characteristics 1. 0.1 0.01 1 ...

Page 6

ZXMN2A02X8 3000 2500 2000 C ISS 1500 C OSS 1000 500 0 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage TYPICAL CHARACTERISTICS 4 11A 4 ...

Page 7

PACKAGE OUTLINE PACKAGE DIMENSIONS Millimetres DIM MIN MAX A 1.10 A1 0.05 0.15 B 0.25 0.40 C 0.13 0.23 D 2.90 3.10 © Zetex Semiconductors plc 2005 Europe Americas Zetex GmbH Zetex Inc Streitfeldstraße 19 700 Veterans Memorial Hwy D-81673 ...

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