ZXMN10A08DN8TC Diodes Zetex, ZXMN10A08DN8TC Datasheet - Page 2

• Manufacturer Part Number: ZXMN10A08DN8TC
• Description: MOSFET N-CHAN 100V 8SOIC
• Manufacturer: Diodes Zetex

Specifications of ZXMN10A08DN8TC

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 3.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 7.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 405pF @ 50V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
ZXMN10A08DN8
PARAMETER
Drain-source voltage
Gate source voltage
Continuous drain current V
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
PARAMETER
Junction to ambient (a)
Junction to ambient (b)
S E M I C O N D U C T O R S
(c)
A
A
=25°C
=25°C
V
V
GS
GS
GS
(a)
(b)
=10V; T
=10V; T
=10V; T
(c)
A
A
A
=25°C
=70°C
=25°C
(b)
(b)
(a)
(b)
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
2
D
D
j
DSS
GS
:T
θJA
θJA
stg
-55 to +150
VALUE
LIMIT
1.25
14.5
100
100
2.1
1.7
1.6
2.6
1.8
69
10
9
9
20
ISSUE 4 - JANUARY 2005
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
W
W
°C
V
V
A
A
A
A