ZXMN3B04N8TC Diodes Zetex, ZXMN3B04N8TC Datasheet - Page 2

• Manufacturer Part Number: ZXMN3B04N8TC
• Description: MOSFET N-CHAN 30V 8SOIC
• Manufacturer: Diodes Zetex

Specifications of ZXMN3B04N8TC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 7.2A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 23.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2480pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
ZXMN3B04N8
PARAMETER
Drain-source voltage
Gate source voltage
Continuous drain current
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
PARAMETER
Junction to ambient
Junction to ambient
S E M I C O N D U C T O R S
(c)
(a)
(b)
A
A
=25°C
=25°C
@ V
@ V
@ V
(a)
(b)
GS
GS
GS
=4.5V; T
=4.5V; T
=4.5V; T
(c)
(b)
A
A
A
=25°C
=70°C
=25°C
10 sec.
(b)
(b)
(a)
2
SYMBOL
R
R
SYMBOL
V
V
I
I
I
I
P
P
T
JA
JA
D
DM
S
SM
D
D
j
DSS
GS
:T
stg
-55 to +150
VALUE
62.5
41.4
LIMIT
8.9
7.3
7.2
4.5
30
45
45
16
24
2
3
12
ISSUE 2 - MAY 2004
UNIT
°C/W
°C/W
mW/°C
mW/°C
UNIT
°C
W
W
A
A
A
A
A
A
V
V