ZVP2106GTA Diodes Zetex, ZVP2106GTA Datasheet - Page 2

• Manufacturer Part Number: ZVP2106GTA
• Description: MOSFET P-CH 60V 450MA SOT223
• Manufacturer: Diodes Zetex
• Type: Power MOSFETr

Specifications of ZVP2106GTA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 450mA
• Vgs(th) (max) @ Id: 3.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 100pF @ 18V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 450mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Power Dissipation: 200mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant
• Other names: ZVP2106GTR

-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
-10
10
-8
-4
-6
-2
0
5
1
0
-0.1
0
Voltage Saturation Characteristics
0
On-resistance v drain current
V
V
GS-
DS
-10
Output Characteristics
-2
-18V
V
-20V
Gate Source Voltage (Volts)
- Drain Source Voltage (Volts)
GS=
I
D
-Drain Current (Amps)
V
-14V
GS
=-5V
-20
-4
-12V
-10V
TYPICAL CHARACTERISTICS
-6V
-9V
-30
-6
-8V
-7V
-7V
-1.0
-40
-8V
-8
-6V
-9V
-5V
-10V
-10
-50
-2.0
-0.5A
-4V
I
-1A
-0.25A
D=
Normalised R
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-1.8
-1.6
-0.8
-2.0
-1.4
-1.2
-1.0
-0.4
-0.6
-0.2
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
0
-40 -20
Saturation Characteristics
V
DS
Transfer Characteristics
- Drain Source Voltage (Volts)
V
-2
GS-
-2
DS(on)
T
0 20 40 60 80
Gate Source Voltage (Volts)
j
-Junction Temperature (°C)
and V
-4
-4
V
DS=
-10V
GS(th)
-6
-6
100
vs Temperature
120
-8
140 160
V
-8
I
GS=
D=-
V
I
D=
GS=
0.5A
-10V
-1mA
V
DS
180
-10
-10
-10V
V
-7V
-3.5V
-6V
-5V
-9V
-8V
-4V
GS
=