IRFR9210TRLPBF Vishay, IRFR9210TRLPBF Datasheet - Page 5

• Manufacturer Part Number: IRFR9210TRLPBF
• Description: MOSFET P-CH 200V 1.9A DPAK
• Manufacturer: Vishay

Specifications of IRFR9210TRLPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -1.9A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 3ohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 91281
S10-1139-Rev. B, 17-May-10
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
10 %
90 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
- 10 V
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GS
t
d(on)
V
DS
t
r
D.U.T.
R
Vishay Siliconix
D
t
d(off)
t
f
+
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www.vishay.com
V
DD
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