ZXMP3A16GTA Diodes Zetex, ZXMP3A16GTA Datasheet - Page 4

• Manufacturer Part Number: ZXMP3A16GTA
• Description: MOSFET P-CH 30V 4.6A SOT223
• Manufacturer: Diodes Zetex
• Type: Power MOSFETr

Specifications of ZXMP3A16GTA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 29.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 1022pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.045Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 7.5A
• Power Dissipation: 3.9W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP3A16GTR

ELECTRICAL CHARACTERISTICS
NOTES
(1) Measured under pulsed conditions. Width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP3A16G
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1) R
Forward Transconductance (1)(3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
(at T
SYMBOL
V
I
I
V
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
300µ s. Duty cycle
DSS
GSS
d(on)
r
d(off)
f
rr
fs
A
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated).
4
MIN.
-1.0
-30
2% .
1022
-0.85
TYP.
37.1
21.4
17.2
29.6
21.7
16.1
267
229
9.2
3.8
6.5
2.8
8.6
MAX. UNIT CONDITIONS.
0.045
0.070
-0.95 V
100
-1
V
nA
V
S
ns
ns
ns
ns
nC
nC
nC
nC
ns
nC
A
pF
pF
pF
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/ s
D
V
D
D
D
J
J
DS
GS
GS
DS
DS
DD
G
DS
DS
GS
=-250μA, V
=-250 A, V
=-4.2A
=-4.2A
GS
=25 C, I
=25 C, I
=6.0 , V
=-30V, V
=-10V, I
=-4.5V, I
=-15V,I
=-15V, V
=-15V,V
=-15V,V
=0V
=-15V, I
= 20V, V
ISSUE 3 - MAY 2007
S
F
D
=-2A,
=-3.6A,
GS
D
GS
GS
=-4.2A
D
GS
D
GS
=-4.2A
GS
DS
=-1A
=-3.4A
=-10V
=-5V,
=-10V,
DS
=0V
=0V,
=0V
= V
=0V
GS