ZVN2535ASTZ Diodes Zetex, ZVN2535ASTZ Datasheet
ZVN2535ASTZ
Manufacturer Part Number
ZVN2535ASTZ
Description
MOSFET N-CHAN 350V TO92-3
Manufacturer
Diodes Zetex
Datasheet
1.ZVN2535A.pdf
(3 pages)
Specifications of ZVN2535ASTZ
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 Ohm @ 100mA, 10V
Drain To Source Voltage (vdss)
350V
Current - Continuous Drain (id) @ 25° C
90mA
Vgs(th) (max) @ Id
3V @ 1mA
Input Capacitance (ciss) @ Vds
70pF @ 25V
Power - Max
700mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
Measured under pulsed conditions. Width=300 s. Duty cycle 2%
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source
Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(
2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
350 Volt V
R
DS(on)
=35
DS
amb
=25°C
amb
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
=25°C
fs
GS(th)
DS(on)
iss
oss
rss
DSS
350
1
250
100
3-372
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
3
20
10
400
35
70
10
4
7
7
16
10
stg
V
V
nA
mA
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
ID=1mA, V
V
V
V
T=125°C
V
V
V
V
V
D
GS
DS
DS
DS
GS
DS
DS
DD
=1mA, V
-55 to +150
= 20V, V
=350V, V
=280V, V
=25V, V
=10V,I
=25V,I
=25 V, V
VALUE
25V, I
350
700
90
ZVN2535A
1
20
(2)
TO92 Compatible
D
D
GS
DS
=100mA
=100mA
GS
D
D
GS
GS
GS
=0V
=100mA
G
= V
DS
=10V
S
=0V, f=1MHz
E-Line
=0
=0V,
=0V
GS
UNIT
mW
mA
°C
A
V
V
(
1
)
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ZVN2535ASTZ Summary of contents
Page 1
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 350 Volt =35 DS(on) ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T Pulsed Drain Current Gate Source Voltage Power Dissipation at ...
Page 2
TYPICAL CHARACTERISTICS 800 700 600 500 400 300 200 100 Drain Source Voltage (Volts) DS Output Characteristics ...
Page 3
ZVN2535A TYPICAL CHARACTERISTICS 250 200 150 100 -Gate Source Voltage (Volts) GS Transconductance v gate-source voltage V =3V GS 100 100 I Drain Current ...