ZVN2106GTC Diodes Zetex, ZVN2106GTC Datasheet
ZVN2106GTC
Manufacturer Part Number
ZVN2106GTC
Description
MOSFET N-CHAN 60V SOT223
Manufacturer
Diodes Zetex
Datasheet
1.ZVN2106GTA.pdf
(2 pages)
Specifications of ZVN2106GTC
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
710mA
Vgs(th) (max) @ Id
2.4V @ 1mA
Input Capacitance (ciss) @ Vds
75pF @ 18V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZVN2106GTC
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – NOVEMBER 1995
FEATURES
*
*
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
PARAMETER
Drain-Source Voltage
PARAMETER
Drain-Source Breakdown Voltage
Gate-Body Leakage
On-State Drain Current (1)
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
Gate-Source Threshold Voltage
Zero Gate Voltage Drain Current
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
ReverseTransfer Capacitance(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
60 Volt V
R
DS(on)
=2
DS
amb
=25°C
ZVP2106G
ZVN2106
amb
=25°C
SYMBOL MIN. MAX. UNIT CONDITIONS.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
DSS
3 - 385
amb
V
SYMBOL
V
I
I
P
T
60
0.8
2
300
D
DM
tot
j
DS
GS
= 25°C unless otherwise stated).
:T
stg
2.4
20
500
100
2
75
45
20
7
8
12
15
V
V
nA
nA
A
mS
pF
pF
pF
ns
ns
ns
ns
A
-55 to +150
I
I
V
V
V
T=125°C
V
V
V
V
V
D
D
VALUE
GS
DS
DS
DS
GS
DS
DS
DD
=1mA, V
=1mA, V
710
2.0
60
ZVN2106G
=60 V, V
=48 V, V
=18V, V
=18V,I
=18 V, V
= 20V, V
=10V,I
8
20
18V, I
D
(2)
D
D
GS
DS
=1A
=1A
D
GS
GS
GS
GS
=1A
=0V
= V
DS
=10V
=0
=0V,
=0V, f=1MHz
=0V
GS
G
UNIT
mA
W
°C
V
A
V
D
S
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ZVN2106GTC Summary of contents
Page 1
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – NOVEMBER 1995 FEATURES * 60 Volt DS(on) COMPLEMENTARY TYPE - PARTMARKING DETAIL - ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T Pulsed ...
Page 2
ZVN2106G TYPICAL CHARACTERISTICS Drain Source Voltage (Volts) DS Saturation Characteristics 100 -Drain Source Voltage (Volts) DS Capacitance v drain-source voltage ...