ZVP2110ASTZ Diodes Zetex, ZVP2110ASTZ Datasheet - Page 2

• Manufacturer Part Number: ZVP2110ASTZ
• Description: MOSFET P-CHAN 100V TO92-3
• Manufacturer: Diodes Zetex

Specifications of ZVP2110ASTZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 Ohm @ 375mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 230mA
• Vgs(th) (max) @ Id: 3.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 100pF @ 25V
• Power - Max: 700mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

ZVP2110A
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
-8
-6
-4
-2
100
0
10
0
1
0
10
Voltage Saturation Characteristics
0
On-resistance v drain current
V
V
GS-
DS
-10
Output Characteristics
-2
V
-20V
-16V
-12V
-10V
Gate Source Voltage (Volts)
-8V
- Drain Source Voltage (Volts)
-9V
GS=
I
D-
V
Drain Current (mA)
GS
=-4V
-20
-4
100
TYPICAL CHARACTERISTICS
-6V
-7V
-30
-6
-5V
-7V
-40
-8
-10V
-20V
1000
-50
-10
-4.5V
I
-0.5A
-0.25A
-5V
-3.5V
-0.1A
-4V
-4V
D=
3-422
Normalised R
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
0
0
-40 -20
Saturation Characteristics
V
DS
Transfer Characteristics
-2
- Drain Source Voltage (Volts)
V
V
-2
DS(on)
GS-
DS=-
0 20 40 60 80
Gate Source Voltage (Volts)
10V
-4
and V
-4
GS(th)
-6
-6
100
vs Temperature
120
V
-8
I
D=
GS=
-8
140 160
-0.375A
-10V
V
I
D=
GS=
-1mA
V
-10
DS
180°C
-10
-4.5V
-4V
-3.5V
V
-5V
-20V
-16V
-12V
-10V
-9V
-7V
-8V
-6V
GS
=