ZXMP10A17GTA Diodes Zetex, ZXMP10A17GTA Datasheet - Page 4

• Manufacturer Part Number: ZXMP10A17GTA
• Description: MOSFET P-CHAN 100V SOT223
• Manufacturer: Diodes Zetex

Specifications of ZXMP10A17GTA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 100V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Other names: ZXMP10A17GTR

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Notes 5 & 6)
Diode Forward Voltage (Note 5)
Reverse recovery time (Note 6)
Reverse recovery charge (Note 6)
DYNAMIC CHARACTERISTICS (
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 7)
Total Gate Charge (Note 7)
Gate-Source Charge (Note 7)
Gate-Drain Charge (Note 7)
Turn-On Delay Time (Note 7)
Turn-On Rise Time (Note 7)
Turn-Off Delay Time (Note 7)
Turn-Off Fall Time (Note 7)
Notes:
ZXMP10A17G
Document Number DS32022 Rev. 2 - 2
5. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
6. For design aid only, not subject to production testing.
7. Switching characteristics are independent of operating junction temperatures.
Characteristic
Note 6
@T
)
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
V
C
C
GS(th)
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
Q
g
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
www.diodes.com
-100
Min
-2.0
4 of 8
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-0.85
36.6
29.8
10.7
13.4
Typ
424
2.8
7.1
1.7
3.8
3.0
3.5
7.2
33
48
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0.350
0.450
±100
-0.95
Max
-0.5
-4.0
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Diodes Incorporated
A Product Line of
Unit
μA
nA
nC
nC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
I
I
V
f = 1MHz
V
V
V
I
D
D
S
S
D
DS
GS
GS
GS
DS
DS
GS
GS
DD
= -1.7A, V
= -1.5A, di/dt = 100A/μs
= -250μA, V
= -250μA, V
= -1A, R
= -100V, V
= -15V, I
= -50V, V
= ±20V, V
= -10V, I
= -6V, I
= -6.0V
= -10V
= -50V, V
Test Condition
ZXMP10A17G
G
D
GS
≅ 6.0Ω
D
D
= -1.2A
GS
GS
GS
DS
DS
= -1.4A
GS
= -1.4A
= 0V
= 0V
= -10V
= 0V
= V
= 0V
V
I
© Diodes Incorporated
= 0V
D
November 2009
DS
= -1.4A
GS
= -50V