ZXMP6A17N8TC Diodes Zetex, ZXMP6A17N8TC Datasheet - Page 5

• Manufacturer Part Number: ZXMP6A17N8TC
• Description: MOSFET P-CH 60V 2.7A SO8
• Manufacturer: Diodes Zetex

Specifications of ZXMP6A17N8TC

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 637pF @ 30V
• Power - Max: 1.56W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP6A17N8TCTR

Typical Characteristics
ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
0.01
0.01
100
Typical Transfer Characteristics
0.1
0.1
0.1
10
10
10
1
1
On-Resistance v Drain Current
1
0.1
1
T = 25°C
2V
T = 25°C
0.1
-V
-V
Output Characteristics
T = 150°C
DS
GS
-I
D
Drain-Source Voltage (V)
Gate-Source Voltage (V)
Drain Current (A)
2
1
2.5V
1
T = 25°C
10V
3V
3
3.5V
5V
-V
DS
10
-V
10
4V
= 10V
GS
4V
3.5V
2.5V
3V
10V
-V
2V
www.diodes.com
5V
GS
4
5 of 8
0.01
Normalised Curves v Temperature
0.01
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.1
0.1
10
10
Source-Drain Diode Forward Voltage
1
1
-50
0.2
T = 150°C
0.1
-V
-V
Tj Junction Temperature (°C)
Output Characteristics
DS
SD
0.4
T = 150°C
Diodes Incorporated
0
Drain-Source Voltage (V)
Source-Drain Voltage (V)
A Product Line of
V
I
D
GS
0.6
= -250uA
= V
1
50
DS
10V
T = 25°C
0.8
V
I
D
GS
= - 2.3A
= -10V
100
ZXMP6A17N8
5V
10
1.0
V
4.5V
V
GS
3.5V
3V
R
GS(th)
2V
1.5V
= 0V
2.5V
DS(on)
© Diodes Incorporated
-V
GS
150
1.2
March 2010