ZXMN6A11GTC Diodes Zetex, ZXMN6A11GTC Datasheet - Page 4

• Manufacturer Part Number: ZXMN6A11GTC
• Description: MOSFET N-CHAN 60V SOT223
• Manufacturer: Diodes Zetex

Specifications of ZXMN6A11GTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 40V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 6)
Forward Transconductance (Notes 6 & 7)
Diode Forward Voltage (Note 6)
Reverse Recovery Time (Note 7)
Reverse Recovery Charge (Note 7)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge (Note 8)
Total Gate Charge (Note 8)
Gate-Source Charge (Note 8)
Gate-Drain Charge (Note 8)
Turn-On Delay Time (Note 8)
Turn-On Rise Time (Note 8)
Turn-Off Delay Time (Note 8)
Turn-Off Fall Time (Note 8)
Notes:
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
6. Measured under pulsed conditions. Pulse width ≤ 300
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperature.
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
μ
V
C
C
GS(th)
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
Q
g
t
s; duty cycle ≤ 2%.
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
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Min
4 of 8
1.0
60
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0.105
0.150
0.85
21.5
20.5
35.2
17.1
1.25
0.86
1.95
Typ
330
4.9
3.0
5.7
3.5
8.2
4.6
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0.120
0.180
±100
Max
0.95
1.0
3.0
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Diodes Incorporated
A Product Line of
Unit
μA
nA
nC
nC
ns
pF
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
I
I
T
V
f = 1.0MHz
V
V
V
R
D
D
S
S
J
DS
GS
GS
GS
DS
DS
GS
GS
DD
G
= 250μA, V
= 250μA, V
= 2.8A, V
= 2.8A, di/dt = 100A/μs
= 25°C
= 6Ω, V
= 60V, V
= ±20V, V
= 10V, I
= 4.5V, I
= 15V, I
= 40V, V
= 4.5V
= 10V
= 30V, I
Test Condition
GS
GS
ZXMN6A11G
D
D
D
D
GS
GS
GS
DS
= 2.5A
= 2.5A
= 2.5A,
= 10V
DS
= 2A
= 0V, T
= 0V
= 0V,
= 0V
= V
= 0V
V
I
© Diodes Incorporated
D
DS
GS
= 2.5A
October 2010
J
= 15V
= 25°C