ZXMN10A11GTA Diodes Zetex, ZXMN10A11GTA Datasheet - Page 5
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ZXMN10A11GTA
Manufacturer Part Number
ZXMN10A11GTA
Description
MOSFET N-CH 100V 1.3A SOT223
Manufacturer
Diodes Zetex
Datasheet
1.ZXMN10A11GTA.pdf
(8 pages)
Specifications of ZXMN10A11GTA
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
350 mOhm @ 2.6A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
5.4nC @ 10V
Input Capacitance (ciss) @ Vds
274pF @ 50V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN10A11GTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZXMN10A11GTA
Manufacturer:
ZETEX
Quantity:
2 000
Part Number:
ZXMN10A11GTA
Manufacturer:
DIODES/美台
Quantity:
20 000
Typical Characteristics
ZXMN10A11G
Document Number DS32056 Rev. 6 - 2
0.01
Typical Transfer Characteristics
100
0.1
0.1
0.1
10
10
0.01
On-Resistance v Drain Current
1
1
1
3
T = 25°C
0.1
T = 150°C
3.5V
V
V
DS
T = 25°C
Output Characteristics
GS
I
D
Drain-Source Voltage (V)
Gate-Source Voltage (V)
0.1
Drain Current (A)
V
GS
4
1
4V
4.5V
1
T = 25°C
V
DS
10V
= 10V
5V
V
10
5
GS
4.5V
5V
3.5V
4V
10
10V
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5 of 8
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
0.01
0.01
0.1
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
0.1
10
1
-50
1
T = 150°C
0.1
0.4
V
V
Tj Junction Temperature (°C)
T = 150°C
Output Characteristics
DS
SD
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
Diodes Incorporated
0.6
A Product Line of
1
50
10V
V
I
D
V
I
GS
D
= 2.6A
GS
= 250uA
T = 25°C
= 10V
0.8
= V
DS
100
10
ZXMN10A11G
R
1.0
V
5V
3.5V
2.5V
DS(on)
4V
3V
4.5V
GS(th)
V
GS
150
© Diodes Incorporated
January 2010