SI2308DS-T1-E3 Vishay, SI2308DS-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI2308DS-T1-E3
• Description: MOSFET N-CH 60V 2A SOT23-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2308DS-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 160 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.16 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 1250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 160mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2308DS-T1-E3TR

Si2308DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70797.
www.vishay.com
4
0.01
0.1
- 0.2
- 0.4
- 0.6
- 0.8
2
1
0.4
0.2
0.0
10 -
10
1
- 50
0
4
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
Single Pulse
- Source-to-Drain Voltage (V)
Threshold Voltage
10 -
0.4
I
T
D
T
J
J
= 250 µA
25
- Temperature (°C)
3
= 150 °C
0.6
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
10 -
T
J
100
2
= 25 °C
1.0
125
1.2
150
Square Wave Pulse Duration (s)
10 -
1
0.6
0.5
0.4
0.3
0.2
0.1
0.0
12
1
9
6
3
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
2
V
0.1
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
10
4
Time (s)
S09-0133-Rev. D, 02-Feb-09
1
Document Number: 70797
I
D
= 2.0 A
6
100
10
8
500
10
100