ZVN2110ASTZ Diodes Zetex, ZVN2110ASTZ Datasheet - Page 3

• Manufacturer Part Number: ZVN2110ASTZ
• Description: MOSFET N-CHAN 100V TO92-3
• Manufacturer: Diodes Zetex

Specifications of ZVN2110ASTZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 320mA
• Vgs(th) (max) @ Id: 2.4V @ 1mA
• Input Capacitance (ciss) @ Vds: 75pF @ 25V
• Power - Max: 700mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

ZVN2110A
400
500
300
100
200
100
80
Capacitance v drain-source voltage
60
40
20
0
Transconductance v drain current
0
0
V
I
D(on)
DS
10
0.2
-Drain Source Voltage (Volts)
- Drain Current (Amps)
V
DS=
20
0.4
25V
TYPICAL CHARACTERISTICS
30
0.6
0.8
40
1.0
50
C
C
C
iss
oss
rss
3-366
Transconductance v gate-source voltage
500
400
300
200
100
14
12
10
16
8
0
6
4
2
0
Gate charge v gate-source voltage
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
I
D=
V
2
GS
1A
-Gate Source Voltage (Volts)
Q-Charge (nC)
4
V
DS=
25V
6
V
20V
50V
80V
DS
=
8
10