SI3441BDV-T1-E3 Vishay, SI3441BDV-T1-E3 Datasheet

MOSFET P-CH 20V 2.45A 6-TSOP

SI3441BDV-T1-E3

Manufacturer Part Number
SI3441BDV-T1-E3
Description
MOSFET P-CH 20V 2.45A 6-TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr
Datasheets

Specifications of SI3441BDV-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 3.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.45A
Vgs(th) (max) @ Id
850mV @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 4.5V
Power - Max
860mW
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
0.09 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.45 A
Power Dissipation
860 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-2.45A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
90mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-850mV
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.09Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3441BDV-T1-E3TR

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
SI3441BDV-T1-E3
Manufacturer:
VISHAY
Quantity:
56 000
Part Number:
SI3441BDV-T1-E3
Manufacturer:
Bussmann
Quantity:
30 000
Part Number:
SI3441BDV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI3441BDV-T1-E3
Quantity:
2 000
Company:
Part Number:
SI3441BDV-T1-E3
Quantity:
2 380
Company:
Part Number:
SI3441BDV-T1-E3
Quantity:
2 942
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72028
S09-2275-Rev. D, 02-Nov-09
Ordering Information: Si3441BDV-T1-E3 (Lead (Pb)-free)
Marking Code:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 20
(V)
3 mm
Si3441BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
B1xxx
0.090 at V
0.130 at V
Top View
1
2
3
TSOP-6
2.85 mm
R
DS(on)
J
a
= 150 °C)
a
6
5
4
GS
GS
(Ω)
= - 4.5 V
= - 2.5 V
P-Channel 2.5-V (G-S) MOSFET
a
a
A
= 25 °C, unless otherwise noted
I
- 2.45
D
- 2.9
Steady State
Steady State
T
T
T
T
(A)
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
®
Power MOSFETs
Typical
- 2.35
(3) G
- 2.9
- 1.0
1.25
120
5 s
0.8
80
70
- 55 to 150
P-Channel MOSFET
- 20
- 16
± 8
(1, 2, 5, 6) D
Steady State
(4) S
Maximum
- 2.45
- 0.72
-1.95
0.86
0.55
100
145
85
Vishay Siliconix
Si3441BDV
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI3441BDV-T1-E3 Summary of contents

Page 1

... 0.130 2 TSOP-6 Top View 2.85 mm Ordering Information: Si3441BDV-T1-E3 (Lead (Pb)-free) Si3441BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code: B1xxx ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si3441BDV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72028 S09-2275-Rev. D, 02-Nov- 4 °C J 1.0 1.2 1.4 1.6 Si3441BDV Vishay Siliconix 1000 800 600 C iss 400 200 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.3 1 ...

Page 4

... Si3441BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 I DM Limited DS(on ° ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72028. Document Number: 72028 S09-2275-Rev. D, 02-Nov- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3441BDV Vishay Siliconix www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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