SI1012R-T1-E3 Vishay, SI1012R-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1012R-T1-E3
• Description: MOSFET N-CH 20V 500MA SC-75A
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1012R-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 1.25ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 900mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1012R-T1-E3TR

Si1012R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
1000
- 0.1
- 0.2
- 0.3
100
0.3
0.2
0.1
10
0
1
0.0
- 50
Threshold Voltage Variance vs. Temperature
T
J
Source-Drain Diode Forward Voltage
0.2
- 25
= 25 °C
V
SD
T
0.4
J
- Source-to-Drain Voltage (V)
0
= 125 °C
T
J
- Temperature (°C)
0.6
25
I
T
0.8
D
50
J
= 0.25 mA
= - 55 °C
7
6
5
4
3
2
1
0
- 50
A
1.0
75
= 25 °C, unless otherwise noted)
- 25
1.2
100
BV
0
T
GSS
J
125
1.4
- Temperature (°C)
vs. Temperature
25
50
75
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
- 50
100
0
On-Resistance vs. Gate-to-Source Voltage
- 25
125
V
GS
1
= 4.5 V
V
GS
0
I
GSS
T
- Gate-to-Source Voltage (V)
2
I
J
D
- Temperature (°C)
= 350 mA
I
vs. Temperature
D
25
= 200 mA
3
S10-2432-Rev. D, 25-Oct-10
50
Document Number: 71166
4
75
100
5
125
6