SI2303BDS-T1-E3 Vishay, SI2303BDS-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI2303BDS-T1-E3
• Description: MOSFET P-CH 30V 1.49A SOT23-3
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI2303BDS-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.49A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 15V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.3 A
• Power Dissipation: 700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -1.49µA
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 380mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.2Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2303BDS-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72065
S-80642-Rev. C, 24-Mar-08
0.8
0.6
0.4
0.2
0.0
10
10
8
6
4
2
0
8
6
4
2
0
0
0
0
V
GS
V
I
D
DS
On-Resistance vs. Drain Current
= 1.7 A
= 4.5 V
= 15 V
2
1
2
V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
I
g
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
4
4
2
V
GS
= 10 thru 6 V
6
6
3
V
GS
= 10 V
8
8
4
2 V, 3 V
5 V
4 V
10
10
5
300
250
200
150
100
1.6
1.4
1.2
1.0
0.8
0.6
10
50
0
8
6
4
2
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
V
I
D
GS
1
= 1.7 A
5
= 10 V
V
V
T
GS
Transfer Characteristics
0
DS
J
2
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
10
- Drain-to-Source Voltage
oss
Capacitance
25
3
T
C
C
50
iss
15
Vishay Siliconix
= - 55°C
25 °C
4
Si2303BDS
75
20
5
100
www.vishay.com
125 °C
25
125
6
150
30
7
3