SI1013R-T1-E3 Vishay, SI1013R-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1013R-T1-E3
• Description: MOSFET P-CH 20V 350MA SC-75A
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1013R-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: - 350 mA
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -350mA
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 2.7ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1013R-T1-E3TR

Si1013R/X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
www.vishay.com
4
- 0.1
- 0.2
- 0.3
0.3
0.2
0.1
0.0
0.01
- 50
0.1
2
1
Threshold Voltage Variance vs. Temperature
10
-4
0.05
0.02
- 25
Duty Cycle = 0.5
0.1
0.2
0
T
J
- Temperature (°C)
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)
Single Pulse
10
25
-3
I
D
50
= 0.25 mA
7
6
5
4
3
2
1
0
- 50
A
75
10
= 25 °C, unless otherwise noted)
-2
- 25
100
BV
0
GSS
125
T
Square Wave Pulse Duration (s)
J
- Temperature (°C)
vs. Temperature
25
10
-1
50
75
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
100
- 50
125
- 25
V
10
0
GS
I
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
GSS
T
P
J
DM
= 4.5 V
JM
- Temperature (°C)
vs. Temperature
- T
25
t
1
A
= P
S10-2432-Rev. D, 25-Oct-10
t
2
DM
Document Number: 71167
50
Z
th JA
th JA
100
t
t
1
2
(t)
= 833 °C/W
75
100
600
125