VN10LFTC Diodes Zetex, VN10LFTC Datasheet

MOSFET N-CHAN 60V SOT23-3

VN10LFTC

Manufacturer Part Number
VN10LFTC
Description
MOSFET N-CHAN 60V SOT23-3
Manufacturer
Diodes Zetex
Datasheet

Specifications of VN10LFTC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
150mA
Vgs(th) (max) @ Id
2.5V @ 1mA
Input Capacitance (ciss) @ Vds
60pF @ 25V
Power - Max
330mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – JANUARY 1996
FEATURES
*
*
PARTMARKING DETAIL –
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
For typical characteristics graphs see ZVN3306F datasheet.
PARAMETER
Drain-Source Voltage
PARAMETER
Drain-Source
Breakdown Voltage
Gate Body Leakage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
Gate-Source
Breakdown Voltage
Zero Gate Voltage
Drain Current (1)
On State Drain
Current(1)
Static Drain Source On
State Resistance (1)
Forward
Transconductance
(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Time (2)(3)
Turn-Off Time (2)(3)
60 Volt V
R
DS(on)
=5
DS
amb
SYMBOL
BV
V
I
I
I
R
g
C
C
C
t
t
GSS
DSS
D(on)
(on)
(off)
= 25°C
fs
GS(th)
DS(on)
iss
oss
rss
DSS
MY
amb
= 25°C
MIN.
60
0.8
750
100
3 - 308
amb
TYP.
3
4
V
SYMBOL
V
I
I
P
T
D
DM
tot
j
DS
GS
= 25°C unless otherwise stated).
:T
stg
MAX.
2.5
100
10
5.0
7.5
60
25
5
10
10
UNIT
V
V
nA
mA
mS
pF
pF
pF
ns
ns
A
-55 to +150
VALUE
150
330
CONDITIONS.
I
I
V
V
V
V
V
V
V
f=1MHz
V
60
D
D
3
20
GS
DS
DS
GS
GS
DS
DS
DD
=100 A, V
=1mA, V
D
VN10LF
=60 V, V
=15 V, V
=15V, I
=25 V, V
= 20V, V
=10V, I
=5V, I
15V, I
D
=200mA
DS
D
D
D
=500mA
=500mA
GS
GS
GS
=600mA
GS
= V
DS
=0V
=10V
=0V
=0V
UNIT
=0V
mW
mA
GS
°C
V
A
V
G
S

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