SI1012R-T1-GE3 Vishay, SI1012R-T1-GE3 Datasheet - Page 5

MOSFET N-CH 20V 500MA SC-75A

SI1012R-T1-GE3

Manufacturer Part Number
SI1012R-T1-GE3
Description
MOSFET N-CH 20V 500MA SC-75A
Manufacturer
Vishay
Datasheet

Specifications of SI1012R-T1-GE3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
700 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
500mA
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
0.75nC @ 4.5V
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.7 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.5 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
600mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
700mohm
Rds(on) Test Voltage Vgs
6V
Threshold Voltage Vgs Typ
900mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1012R-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1012R-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
56 375
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SI1012R-T1-GE3
Manufacturer:
VISHAY
Quantity:
2 855
Part Number:
SI1012R-T1-GE3
Manufacturer:
VISHAY
Quantity:
150
Part Number:
SI1012R-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
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Quantity:
60 000
Company:
Part Number:
SI1012R-T1-GE3
Quantity:
70 000
TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71166.
Document Number: 71166
S10-2432-Rev. D, 25-Oct-10
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 4
- 4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)
10
Single Pulse
- 3
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Foot
10
- 3
A
= 25 °C, unless otherwise noted)
10
- 2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
- 2
10
- 1
10
1
- 1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
- T
t
1
A
1
= P
Vishay Siliconix
t
2
DM
Z
thJA
Si1012R/X
thJA
100
t
t
1
2
(t)
= 833 ° C/W
www.vishay.com
6
0
1
0
0
5

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