SI1013R-T1-GE3 Vishay, SI1013R-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI1013R-T1-GE3
• Description: MOSFET P-CH 20V 350MA SC-75A
• Manufacturer: Vishay

Specifications of SI1013R-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -400mA
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 2.7ohm
• Rds(on) Test Voltage Vgs: 6V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1013R-T1-GE3TR

TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see www.vishay.com/ppg?71167.
Document Number: 71167
S10-2432-Rev. D, 25-Oct-10
0.01
0.1
2
1
10
-4
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
A
= 25 °C, unless otherwise noted)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si1013R/X
www.vishay.com
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