BSS84-7 Diodes Inc, BSS84-7 Datasheet - Page 2

• Manufacturer Part Number: BSS84-7
• Description: MOSFET P-CH 50V 130MA SOT23-3
• Manufacturer: Diodes Inc

Specifications of BSS84-7

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 130mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 45pF @ 25V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BSS84DITR

BSS84
Document number: DS30149 Rev. 14 - 2
150
400
350
300
250
200
100
15
12
-0.4
-0.2
-1.0
-0.8
-0.6
50
0.0
9
6
3
0
-50
0
Fig. 1 Max Power Dissipation vs. Ambient Temperature
0
0
Fig. 5 On-Resistance vs. Junction Temperature
-25
Fig. 3 Drain-Current vs. Gate-Source Voltage
25
-1
V
I = -0.13A
D
GS
T , JUNCTION TEMPERATURE (°C)
T , AMBIENT TEMPERATURE (°C)
J
A
V
= -10V
GS
50
0
-2
, GATE-SOURCE VOLTAGE (V)
25
75
-3
100 125
50
-4
75
-5
100
150
-6
125
175
-7
150
200
-8
www.diodes.com
2 of 4
-400
-600
-500
-300
-200
-100
25.0
20.0
15.0
10.0
5.0
0.0
10
0
9
8
7
6
5
4
3
2
1
0
0
Fig. 2 Drain-Source Current vs. Drain-Source Voltage
0.0
0
Fig. 4 On-Resistance vs. Gate-Source Voltage
Fig. 6 On-Resistance vs. Drain-Current
V , DRAIN-SOURCE VOLTAGE (V)
-1
-0.2
DS
-1
I , DRAIN-CURRENT (A)
V
D
GS
, GATE-SOURCE (V)
-2
-0.4
-2
T
A
= 25 C
-3
-0.6
-3
°
T = 125 C
A
-4
-0.8
-4
© Diodes Incorporated
°
February 2010
BSS84
-1.0
-5
-5