BSS138-7 Diodes Inc, BSS138-7 Datasheet - Page 3
![MOSFET N-CH 50V 200MA SOT23-3](/photos/1/37/13783/sot23_sml.jpg)
BSS138-7
Manufacturer Part Number
BSS138-7
Description
MOSFET N-CH 50V 200MA SOT23-3
Manufacturer
Diodes Inc
Datasheet
1.BSS138-7-F.pdf
(5 pages)
Specifications of BSS138-7
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 Ohm @ 220mA, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Input Capacitance (ciss) @ Vds
50pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Gate Charge (qg) @ Vgs
-
Other names
BSS138DITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS138-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
BSS138-7-01-F
Manufacturer:
DIODES
Quantity:
2 800
Company:
Part Number:
BSS138-7-01-F
Manufacturer:
SANKEN
Quantity:
4 122
Company:
Part Number:
BSS138-7-F
Manufacturer:
Diodes Inc
Quantity:
849 662
Company:
Part Number:
BSS138-7-F
Manufacturer:
Diodes
Quantity:
5 335
Part Number:
BSS138-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
BSS138-7-F-K-HN
Manufacturer:
DIODES
Quantity:
27 000
BSS138
Document number: DS30144 Rev. 14 - 2
Fig. 3 Drain-Source On-Resistance vs. Junction Temperature
2.45
2.25
1.65
1.45
1.25
1.05
0.85
0.65
2.05
1.85
3
2
0
4
6
5
8
7
6
5
3
0
4
2
1
1
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
Fig. 7 Drain-Source On-Resistance vs. Drain-Current
0
0
-55
V
0.02 0.04
GS
= 2.5V
T , JUNCTION TEMPERATURE (°C)
0.1
j
-5
I , DRAIN-CURRENT (A)
I , DRAIN-CURRENT (A)
D
D
0.06 0.08
0.2
V
45
GS
= 4.5V
0.3
0.1
V
I = 0.5A
GS
D
0.12
= 10V
150 C °
V
I = 0.075A
95
D
0.4
GS
25 C °
150 C
-55 C
-55 C °
= 4.5V
°
25 C
0.14
°
°
0.16
0.5
145
www.diodes.com
3 of 5
1.8
1.6
1.4
1.2
0.6
0.8
0.4
0.2
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
0.5
1.5
3.5
4
2.5
9
6
5
3
0
8
7
2
0
1
2
-55
1
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
0
3
1
2
Fig. 8 Drain-Source On Resistance vs. Drain-Current
0
0
-25
T , JUNCTION TEMPERATURE (°C)
0.05
j
0.1
I , DRAIN-CURRENT (A)
D
I , DRAIN-CURRENT (A)
5
D
0.1
V
0.2
GS
35
= 10V
65
V
0.15
GS
0.3
= 2.75V
95
I = 1.0mA
D
-55 C °
150 C °
25 C °
0.2
0.4
150 C °
125
-55 C °
25 C
© Diodes Incorporated
°
BSS138
0.25
January 2011
155
0.5