IRF6644TR1PBF International Rectifier, IRF6644TR1PBF Datasheet

IRF6644TR1PBF

Manufacturer Part Number

IRF6644TR1PBF

Description

MOSFET N-CH 100V 10.3A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheet

1.IRF6644TR1PBF.pdf (10 pages)

Specifications of IRF6644TR1PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

13 mOhm @ 10.3A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

10.3A

Vgs(th) (max) @ Id

4.8V @ 150µA

Gate Charge (qg) @ Vgs

47nC @ 10V

Input Capacitance (ciss) @ Vds

2210pF @ 25V

Power - Max

2.8W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MN

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.013Ohm

Drain-source On-volt

100V

Gate-source Voltage (max)

±20V

Continuous Drain Current

10.3A

Power Dissipation

2.8W

Operating Temp Range

-40C to 150C

Operating Temperature Classification

Automotive

Mounting

Surface Mount

Pin Count

Package Type

Direct-FET MN

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

20 V

Gate Charge Qg

35 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF6644TR1PBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF6644TR1PBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 10
Download datasheet (255Kb)

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

‚

Description

The IRF6644PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with

existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,

when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided

cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6644PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom

applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device

coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability

improvements, and makes this device ideal for high performance isolated DC-DC converters.

www.irf.com

Absolute Maximum Ratings

RoHS Compliant

Lead-Free (Qualified up to 260°C Reflow)

Application Specific MOSFETs

Ideal for High Performance Isolated Converter

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Techniques

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

Primary Switch Socket

0.08

0.06

0.04

0.02

0.00

= 25°C

= 70°C

= 25°C

Fig 1. Typical On-Resistance Vs. Gate Voltage

V GS , Gate-to-Source Voltage (V)

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

T J = 125°C

T J = 25°C

Ãg

I D = 6.2A

Parameter

@ 10V

„

…

†

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

measured with thermocouple mounted to top (Drain) of part.

= 25°C, L = 12mH, R

Fig 2. Typical On-Resistance Vs. Drain Current

T A = 25°C

100V max ±20V max 10.3mΩ@ 10V

DirectFET™ Power MOSFET ‚

35nC

g tot

DSS

I D , Drain Current (A)

Max.

10.3

100

220

±20

8.3

6.2

IRF6644TRPbF

V GS = 7.0V

11.5nC

V GS = 8.0V

V GS = 10V

V GS = 15V

= 25Ω, I

IRF6644PbF

DirectFET™ ISOMETRIC

packaging to achieve the

= 6.2A.

3.7V

DS(on)

gs(th)

Units

8/18/06

Related parts for IRF6644TR1PBF

IRF6644TR1PBF Summary of contents

Page 1

RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter l Primary Switch Socket Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile ...

Page 2

IRF6644PbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation D A Power Dissipation 25° Peak Soldering Temperature P T Operating Junction and J Storage Temperature Range ...

Page 4

IRF6644PbF 100 6.0V 10 ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100. 150° 25°C 10. -40°C 1.00 ...

Page 5

150°C 10 25° -40°C 1.0 0.1 0.0 1.0 2.0 3 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

IRF6644PbF Fig 15a. Gate Charge Test Circuit D.U 20V GS 0.01 Ω Fig 16b. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching Time Test ...

Page 7

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 18. DirectFET™ Substrate and PCB Layout, MN Outline (Medium Size Can, N-Designation). Please see DirectFET application note AN-1035 for all details regarding the ...

Page 8

IRF6644PbF DirectFET™ Outline Dimension, MN Outline (Medium Size Can, N-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS IMPERIAL METRIC ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6644TRPBF). For 1000 parts on 7" reel, order IRF6644TR1PBF CODE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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