IRF6636 International Rectifier, IRF6636 Datasheet - Page 5

• Manufacturer Part Number: IRF6636
• Description: MOSFET N-CH 20V 18A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6636

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.45V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2420pF @ 10V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric ST
• Configuration: Single Quad Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.5 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 6.2 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 19 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6636TR

Fig 12. Maximum Drain Current vs. Case Temperature
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Fig 10. Typical Source-Drain Diode Forward Voltage
1000
100
10
90
80
70
60
50
40
30
20
10
1
0
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
25
V SD , Source-to-Drain Voltage (V)
50
T C , Case Temperature (°C)
75
Fig 14. Maximum Avalanche Energy vs. Drain Current
100
T J = 150°C
T J = 25°C
T J = -40°C
120
100
80
60
40
20
0
V GS = 0V
25
125
Starting T J , Junction Temperature (°C)
50
150
75
100
1000
0.01
Fig 13. Threshold Voltage vs. Temperature
I D
BOTTOM 14A
100
0.1
10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Fig11. Maximum Safe Operating Area
1
0.01
-75 -50 -25
125
T A = 25°C
T J = 150°C
Single Pulse
TOP
6.4A
9.8A
V DS , Drain-to-Source Voltage (V)
0.10
150
OPERATION IN THIS AREA
LIMITED BY R DS (on)
I D = 50µA
T J , Temperature ( °C )
0
1.00
25
50
10msec
100µsec
1msec
75 100 125 150
10.00
IRF6636
100.00
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