IRFS5615TRLPBF International Rectifier, IRFS5615TRLPBF Datasheet

IRFS5615TRLPBF

Manufacturer Part Number

IRFS5615TRLPBF

Description

MOSFET N-CH 150V 33A D2PAK

Manufacturer

International Rectifier

Datasheet

1.IRFSL5615PBF.pdf (9 pages)

Specifications of IRFS5615TRLPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

42 mOhm @ 21A, 10V

Drain To Source Voltage (vdss)

150V

Current - Continuous Drain (id) @ 25° C

33A

Vgs(th) (max) @ Id

5V @ 100µA

Gate Charge (qg) @ Vgs

40nC @ 10V

Input Capacitance (ciss) @ Vds

1750pF @ 50V

Power - Max

144W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Transistor Polarity

N Channel

Continuous Drain Current Id

33A

Drain Source Voltage Vds

150V

On Resistance Rds(on)

34.5mohm

Rds(on) Test Voltage Vgs

10V

Rohs Compliant

Yes

Drain-source Breakdown Voltage

150 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

33 A

Power Dissipation

144 W

Mounting Style

SMD/SMT

Gate Charge Qg

26 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRFS5615TRLPBFTR

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Features

• Key Parameters Optimized for Class-D Audio

• Low R

• Low Q

• 175°C Operating Junction Temperature for

• Can Deliver up to 300W per Channel into 4Ω Load in

Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes

the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode

reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance

factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction

temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,

robust and reliable device for ClassD audio amplifier applications.

www.irf.com

Notes through

Absolute Maximum Ratings

Thermal Resistance

Amplifier Applications

Ruggedness

Half-Bridge Configuration Amplifier

Efficiency

STG

θJC

θJA

@ T

DSON

= 25°C

= 100°C

= 25°C

= 100°C

and Q

for Better THD and Lower EMI

for Improved Efficiency

†

for Better THD and Improved

are on page 2

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Junction-to-Case

Junction-to-Ambient (PCB Mount)

Parameter

@ 10V

DS(ON)

G(int)

max

typ.

Gate

typ.

typ. @ 10V

Key Parameters

Typ.

IRFSL5615PbF

–––

IRFS5615PbF

-55 to + 175

Drain

IRFS5615PbF

Max.

0.96

150

140

144

300

±20

Pak

1.045

Max.

34.5

150

175

2.7

IRFSL5615PbF

Source

TO-262

Units

W/°C

°C/W

°C

12/18/08

°C

Ω

Related parts for IRFS5615TRLPBF

IRFS5615TRLPBF Summary of contents

Page 1

Features • Key Parameters Optimized for Class-D Audio Amplifier Applications • Low R for Improved Efficiency DSON • Low Q and Q for Better THD and Improved G SW Efficiency • Low Q for Better THD and Lower EMI RR ...

Page 2

Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

Page 3

VGS TOP 15V 12V 10V 100 8.0V 7.0V 6.0V 5.5V BOTTOM 5. 5.0V 0.1 ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 ...

Page 4

175° 25° 1.0 0.2 0.4 0.6 0.8 1.0 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

125°C 0. 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage 100 Duty Cycle = Single ...

Page 6

D.U.T + ƒ • • - • + ‚ „ • G • • SD • Fig 16. HEXFET 15V DRIVER D.U 20V 0.01 Ω Fig 17a. Unclamped ...

Page 7

UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ 5 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ Q6SUÃIVH7@S 6U@Ã8P @ ...

Page 8

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ ...

Page 9

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ ...

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