SI4420DYTRPBF International Rectifier, SI4420DYTRPBF Datasheet - Page 4

• Manufacturer Part Number: SI4420DYTRPBF
• Description: MOSFET N-CH 30V 12.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4420DYTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 2240pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4420DYPBFTR; SI4420DYTRPBF; SI4420DYTRPBFTR

4
1000
4000
3000
2000
1000
100
10
1
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
V
V
SD
1.0
DS
Forward Voltage
V
C
C
C
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
=
=
=
=
2.0
T = 25 C
0V,
C
C
C
J
gs
gd
ds
C iss
C oss
C rss
+ C
+ C
10
°
f = 1MHz
gd ,
gd
3.0
C
T = 150 C
ds
J
V
SHORTED
4.0
GS
°
= 0 V
5.0
100
1000
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C
= 150 C
12.5A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
20
Q , Total Gate Charge (nC)
°
°
G
, Drain-to-Source Voltage (V)
1
40
BY R
V
V
DS
DS
DS(on)
= 24V
= 15V
FOR TEST CIRCUIT
60
SEE FIGURE
10
www.irf.com
80
100us
1ms
10ms
13
100
100