IRFR3806TRPBF International Rectifier, IRFR3806TRPBF Datasheet

MOSFET N-CH 60V 43A DPAK

IRFR3806TRPBF

Manufacturer Part Number
IRFR3806TRPBF
Description
MOSFET N-CH 60V 43A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFR3806TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15.8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
43A
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1150pF @ 50V
Power - Max
71W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
43 A
Power Dissipation
71 W
Mounting Style
SMD/SMT
Gate Charge Qg
22 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFR3806TRPBFTR

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Applications
l
l
l
l
Benefits
l
l
l
www.irf.com
Absolute Maximum Ratings
I
I
I
P
V
dv/dt
T
T
Avalanche Characteristics
E
I
E
Thermal Resistance
R
R
R
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AR
θJC
θCS
θJA
@ T
@ T
High Efficiency Synchronous Rectification in
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche SOA
Enhanced body diode dV/dt and dI/dt
Capability
SMPS
@T
Symbol
Symbol
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, V
Pulsed Drain Current c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Single Pulse Avalanche Energy d
Avalanche Current c
Repetitive Avalanche Energy f
Junction-to-Case j
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient ij
Parameter
Parameter
GS
@ 10V
G
S
D
V
R
I
D
DSS
DS(on)
Gate
G
Typ.
0.50
–––
–––
IRFR3806PbF
D
-55 to + 175
typ.
D-Pak
max.
IRFR3806PbF
IRFU3806PbF
Max.
0.47
170
± 20
300
HEXFET Power MOSFET
7.1
G
43
31
71
24
73
25
Drain
S
D
IRFU3806PbF
Max.
2.12
–––
62
I-Pak
12.6m Ω
15.8m Ω
43A
60V
Source
G
D
S
S
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
03/04/08
1

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IRFR3806TRPBF Summary of contents

Page 1

Applications l High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Benefits Improved Gate, Avalanche and Dynamic l dv/dt Ruggedness Fully Characterized Capacitance and l Avalanche SOA ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 100 4.8V BOTTOM 4.5V 10 4.5V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...

Page 4

175° 25°C 1 0.1 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 0.01 10 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, ...

Page 6

50µ 250µ 1.0mA 2 1.0A 1.5 1.0 -75 -50 - 100 125 150 175 200 Temperature ( ...

Page 7

D.U.T + ƒ ‚ -  R • • • SD • Fig 20 D.U 20V V GS 0.01 Ω Fig 21a. Unclamped Inductive Test Circuit ...

Page 8

25 8 ,5)5 $   ,5)5   www.irf.com ...

Page 9

25 www.irf.com ,5)8 $   ,5)8   9 ...

Page 10

NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS TO ...

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