IRF7406TRPBF International Rectifier, IRF7406TRPBF Datasheet - Page 4
![MOSFET P-CH 30V 5.8A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7406TRPBF
Manufacturer Part Number
IRF7406TRPBF
Description
MOSFET P-CH 30V 5.8A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7406TRPBF.pdf
(9 pages)
Specifications of IRF7406TRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
45 mOhm @ 2.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
59nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
70 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 5.8 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
39.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7406PBFTR
IRF7406TRPBF
IRF7406TRPBFTR
IRF7406TRPBF
IRF7406TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7406TRPBF
Manufacturer:
IR
Quantity:
23 000
Company:
Part Number:
IRF7406TRPBF
Manufacturer:
International Rectifier
Quantity:
45 122
Part Number:
IRF7406TRPBF
Manufacturer:
IR
Quantity:
20 000
4
100
0.1
2500
2000
1500
1000
10
500
1
0.3
0
1
T = 150°C
J
-V
-V
SD
C
C
DS
C
oss
iss
rss
V
C
C
C
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
0.6
= 0V,
= C
= C
= C
T = 25°C
J
gs
gd
ds
+ C
+ C
10
gd
gd
f = 1MHz
, C
0.9
ds
SHORTED
V
GS
= 0V
1.2
100
A
A
20
16
12
100
8
4
0
10
1
0
0.1
I
V
D
DS
T
T
Single Pulse
A
J
= -2.8A
= 25 C
= 150 C
= -24V
OPERATION IN THIS AREA LIMITED
-V
Q , Total Gate Charge (nC)
DS
°
°
G
, Drain-to-Source Voltage (V)
20
1
BY R
DS(on)
FOR TEST CIRCUIT
SEE FIGURE 12
40
www.irf.com
10
100us
1ms
10ms
60
100
A