ZXMN6A08GTA Diodes Zetex, ZXMN6A08GTA Datasheet - Page 2

• Manufacturer Part Number: ZXMN6A08GTA
• Description: MOSFET N-CH 60V 3.8A SOT223
• Manufacturer: Diodes Zetex

Specifications of ZXMN6A08GTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 459pF @ 40V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN6A08GTR

Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
(b) For a device surface mounted on FR4 PCB measured at t
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Junction to ambient
Junction to ambient
conditions.
temperature.
(a)
(b)
(c)
amb
amb
= 25°C
= 25°C
@ V
@ V
@ V
(a)
(b)
GS
GS
GS
(c)
= 10V; T
= 10V; T
= 10V; T
(b)
amb
amb
amb
2
10 sec.
= 25°C
= 70°C
= 25°C
(b)
(b)
(a)
Symbol
Symbol
T
V
R
R
V
j
I
I
, T
P
P
DM
DSS
SM
I
I
GS
D
S
D
D
JA
JA
stg
ZXMN6A08G
-55 to +150
Limit
Limit
± 20
62.5
5.3
4.2
3.8
2.1
3.9
60
20
20
16
31
32
2
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mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
W
W
°C
V
V
A
A
A
A