SI2304BDS-T1-GE3 Vishay, SI2304BDS-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SI2304BDS-T1-GE3
• Description: MOSFET N-CH 30V 2.6A SOT23-3
• Manufacturer: Vishay

Specifications of SI2304BDS-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 5V
• Input Capacitance (ciss) @ Vds: 225pF @ 15V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.2A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 105mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI2304BDS-T1-GE3TR

Si2304BDS
Vishay Siliconix
Notes:
a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
10
8
6
4
2
0
0
V
GS
2
V
a
= 10 thru 5 V
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
a
A
= 25 °C, unless otherwise noted
4
4 V
6
V
Symbol
R
V
(BR)DSS
I
t
t
I
I
C
D(on)
DS(on)
V
C
C
GS(th)
Q
Q
d(on)
d(off)
GSS
Q
DSS
g
Q
R
oss
t
SD
t
iss
rss
fs
gs
gd
r
f
gt
g
g
8
3 V
V
V
V
V
V
DS
I
DS
DS
D
DS
DS
= 30 V, V
≅ 1 A, V
10
= 15 V, V
V
= 30 V, V
V
V
= 15 V, V
= 15 V, V
V
V
V
V
V
I
V
DS
DS
DS
S
GS
GS
DS
DD
DS
GS
= 1.25 A, V
Test Conditions
= 0 V, V
= V
≥ 4.5 V, V
= 0 V, I
= 4.5 V, I
= 4.5 V, I
= 30 V, V
= 15 V, R
= 10 V, I
f = 1.0 MHz
GEN
GS
GS
GS
GS
GS
GS
, I
= 1.0 V, T
= 10 V, R
= 10 V, I
= 0 V, T
D
GS
= 5 V, I
= 0 V, f = 1 MHz
D
D
= 250 µA
GS
D
D
= 250 µA
GS
GS
L
= ± 20 V
= 2.5 A
= 2.0 A
= 2.5 A
= 15 Ω
= 10 V
= 0 V
= 0 V
D
J
D
J
g
= 55 °C
= 2.5 A
= 2.5 A
= 25 °C
= 6 Ω
10
8
6
4
2
0
0
1
Min.
1.5
30
V
6
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
2
Limits
0.055
0.080
Typ.
1.15
12.5
225
6.0
0.8
2.6
4.6
0.8
3.0
7.5
50
28
19
15
25 °C
T
S-80642-Rev. D, 24-Mar-08
C
Document Number: 72503
= 125 °C
3
± 100
0.070
0.105
Max.
3.0
0.5
1.2
10
12
20
30
25
1
4
7
- 55 °C
4
Unit
nA
µA
nC
pF
ns
Ω
Ω
V
A
S
V
5