TP0610K-T1-E3 Vishay, TP0610K-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: TP0610K-T1-E3
• Description: MOSFET P-CH 60V 185MA SOT23-3
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of TP0610K-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 185mA
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 1.7nC @ 15V
• Input Capacitance (ciss) @ Vds: 23pF @ 25V
• Power - Max: 350mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.185 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -185mA
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 6ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 6Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: TP0610K-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71411
S10-1283-Rev. G, 31-May-10
1.0
0.8
0.6
0.4
0.2
0.0
20
16
12
15
12
8
4
0
9
6
3
0
0.0
0
0
I
D
On-Resistance vs. Drain Current
0.3
= 500 mA
200
1
V
DS
Output Characteristics
Q
g
I
- Drain-to-Source Voltage (V)
D
0.6
- Total Gate Charge (nC)
V
- Drain Current (mA)
GS
Gate Charge
8 V
V
400
GS
2
V
= 4.5 V
DS
V
= 5 V
GS
= 30 V
0.9
= 10 V
600
3
V
GS
1.2
= 10 V
V
800
DS
4
1.5
= 48 V
5 V
4 V
7 V
6 V
1000
1.8
5
1200
900
600
300
1.8
1.5
1.2
0.9
0.6
0.3
0.0
40
32
24
16
0
8
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
V
GS
2
V
5
V
V
GS
Transfer Characteristics
GS
T
0
DS
= 10 V at 500 mA
J
= 0 V
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Capacitance
25
10
4
T
J
50
Vishay Siliconix
= - 55 °C
V
GS
C
15
C
C
6
oss
75
iss
rss
= 4.5 V at 25 mA
TP0610K
125 °C
www.vishay.com
100
20
25 °C
8
125
150
10
25
3