2SK2731T146 Rohm Semiconductor, 2SK2731T146 Datasheet - Page 3

• Manufacturer Part Number: 2SK2731T146
• Description: MOSFET N-CH 30V 200MA SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of 2SK2731T146

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.8 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 25pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 200 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SK2731T146; 2SK2731T146TR

Measurement circuit
○
2SK2731
c
www.rohm.com
0.05
0.01
Fig.7 Static Drain-Source On-State
0.5
0.1
2010 ROHM Co., Ltd. All rights reserved.
2.5
1.5
0.5
1
Fig.10 Reverse Drain Current vs.
0
3
2
1
0
−50 −25
V
Pulsed
Resistance vs. Channel Temperature
SOURCE-DRAIN VOLTAGE : V
GS
CHANNEL TEMPERATURE : Tch
=10V
V
Source-Drain Voltage (ΙΙ)
GS
Fig.13 Switching Time Test Circuit
=10V
0
0.5
R
25
G
I
D
=200mA
50
100mA
0V
V
GS
1.0
75
100 125 150
Ta=25 °C
Pulsed
D.U.T.
SD
(V)
( °C)
I
D
1.5
R
V
DD
L
V
DS
1000
100
0.01
10
0.1
1
0.1
10
0.001
1
Fig.11 Typical Capacitance vs.
Fig.8 Forward Transfer Admittance
DRAIN-SOURCE VOLTAGE : V
vs. Drain Current
Drain-Source Voltage
DRAIN CURRENT : I
0.01
1
3/3
C
C
C
oss
rss
iss
Ta= −25 °C
125 °C
25 °C
75 °C
10
0.1
D
(A)
Ta=25 °C
V
f=1MHz
Pulsed
DS
GS
V
Pulsed
(V)
=0V
DS
=10V
V
V
GS
DS
100
1
t
Fig.14 Switching Time Waveforms
d(on)
10%
t
50%
on
10%
t
r
Pulse Width
90%
500m
200m
100m
1000
50m
20m
10m
100
5m
2m
1m
0.001
0
Fig.9 Reverse Drain Current vs.
V
Pulsed
Fig.12 Switching Characteristics
Ta=125 °C
GS
SOURCE-DRAIN VOLTAGE : V
=10V
−25 °C
90%
75 °C
25 °C
DRAIN CURRENT : I
Source-Drain Voltage ( Ι )
t
(See Figure. 13 and 14 for
measurement circuit)
d(off)
0.5
0.01
2010.06 - Rev.A
t
t
t
t
t
off
d(off)
f
r
d(on)
t
f
50%
Data Sheet
10%
90%
1.0
D
0.1
(A)
Ta=25 °C
V
V
R
Pulsed
SD
DD
GS
G
=10Ω
=10V
(V)
15V
0.5
1.5