2SK3565(Q,M) Toshiba, 2SK3565(Q,M) Datasheet - Page 5

• Manufacturer Part Number: 2SK3565(Q,M)
• Description: MOSFET N-CH 900V 5A TO-220SIS
• Manufacturer: Toshiba

Specifications of 2SK3565(Q,M)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1150pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: 2-10U1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SK3565(Q); 2SK3565(Q); 2SK3565Q; 2SK3565Q; 2SK3565QM

0.01
100
0.1
10
1
1
I D max (CONTINUOUS) *
DC OPERATION
※ SINGLE NONREPETITIVE PULSE
Tc=25℃
CURVES
LINEARLY
TEMPERATURE.
I D max (PULSED) *
Tc = 25°C
ドレイン･ソース間電圧 V
MUST
SAFE OPERATING AREA
0.001
WITH
10
0.01
0.1
10
10μ
1
BE
INCREASE
0.02
0.05
0.1
DERATED
Duty=0.5
100
0.2
1 ms *
0.01
IN
100μ
100 μs *
1000
DS
V DSS max
SINGLE PULSE
(V)
1ｍ
10000
PULSE WIDTH t
r
5
th
10ｍ
– t
w
R
V
G
DD
w
= 25 Ω
1000
= 90 V, L = 43.6mH
800
600
400
200
(s)
−15 V
0
100ｍ
15 V
25
TEST CIRCUIT
CHANNEL TEMPERATURE (INITIAL)
P DM
P DM
50
Duty = t/T
Duty = t/T
R th (ch-c) = 1.25°C/W
R th (ch-c) = 2.78°C/W
1
t
t
T
T
75
E
T
AS
ch
Ε AS
– T
V
(°C)
DD
=
ch
100
WAVE FORM
B
10
1
2
VDSS
I
⋅
AR
L
⋅
2 I
⋅
125
⎛
⎜
⎜
⎝
2009-09-29
B VDSS
2SK3565
V
DS
B VDSS
150
−
V DD
⎞
⎟
⎟
⎠