IXTK60N50L2 IXYS, IXTK60N50L2 Datasheet - Page 2

• Manufacturer Part Number: IXTK60N50L2
• Description: MOSFET N-CH 60A 500V TO-264
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTK60N50L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 610nC @ 10V
• Input Capacitance (ciss) @ Vds: 24000pF @ 25V
• Power - Max: 960W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.10
• Ciss, Typ, (pf): 24000
• Qg, Typ, (nc): 610
• Trr, Typ, (ns): 980
• Pd, (w): 960
• Rthjc, Max, (k/w): 0.13
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Safe Operating Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
I
I
V
t
I
Q
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
(T
(T
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots;
but also may yet contain some information supplied during a pre-production design evaluation.
IXYS reserves the right to change limits, test conditions, and dimensions without notice.
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Test Conditions
V
Repetitive, pulse width limited by T
I
I
V
F
F
DS
GS
GS
GS
DS
GS
R
G
= I
= 60A, -di/dt = 100A/μs,
= 100V, V
PRELIMINARY TECHNICAL INFORMATION
= 10V, I
= 10V, V
= 0V, V
= 10V, V
= 0.5Ω (External)
= 400V, I
= 0V
S
, V
GS
= 0V, Note 1
D
DS
DS
GS
= 0.5 • I
DS
D
= 25V, f = 1MHz
= 0.5 • V
= 0V
= 0.5 • V
= 1.1A, T
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
C
, I
= 75°C, tp = 3s
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
440
18
Min.
Min.
Min.
Characteristic Values
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
1325
35.8
0.15
980
Typ.
Typ.
Typ.
172
165
610
130
365
25
73
24
40
40
38
0.13
6,404,065 B1
6,534,343
6,583,505
240
32
Max.
Max.
Max.
1.5
60
°C/W
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
ns
W
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
PLUS 247
TO-264 (IXTK) Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
20.80
15.75
19.81
TM
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
Millimeter
5.45 BSC
(IXTX) Outline
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
7,005,734 B2
7,063,975 B2
IXTK60N50L2
IXTX60N50L2
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
Inches
7,157,338B2
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190