IXFK73N30 IXYS, IXFK73N30 Datasheet - Page 4

• Manufacturer Part Number: IXFK73N30
• Description: MOSFET N-CH 300V 73A TO-264AA
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK73N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 73A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 360nC @ 10V
• Input Capacitance (ciss) @ Vds: 9000pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohms
• Forward Transconductance Gfs (max / Min): 50 s
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 73 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 300
• Id(cont), Tc=25°c, (a): 73
• Rds(on), Max, Tj=25°c, (?): 0.045
• Ciss, Typ, (pf): 9000
• Qg, Typ, (nc): 360
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
0.01
160
140
120
100
0.1
10
80
60
40
20
0.001
8
6
4
2
0
0
0.0
0
Fig.7 Gate Charge Characteristic Curve
Fig.9 Source Current vs. Source
Fig.10 Transient Thermal Impedance
V
I
I
D
G
0.2
50
DS
= 42A
= 10mA
= 150V
to Drain Voltage
Gate Charge - nCoulombs
100 150 200 250 300 350 400
0.4
T
J
= 125°C
0.6
V
SD
0.8
- Volts
T
J
1.0
= 25°C
1.2
0.01
1.4
1.6
Time - Seconds
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
0
Fig.8 Capacitance Curves
0.1
5
C
C
C
iss
oss
rss
10
V
f = 1MHz
V
DS
DS
- Volts
= 25V
15
IXFK 73N30
IXFN 73N30
20
25
1