IXFH14N100Q2 IXYS, IXFH14N100Q2 Datasheet - Page 2

• Manufacturer Part Number: IXFH14N100Q2
• Description: MOSFET N-CH 1000V 14A TO-247AD
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH14N100Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 950 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5.5V @ 4mA
• Gate Charge (qg) @ Vgs: 83nC @ 10V
• Input Capacitance (ciss) @ Vds: 2800pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 14
• Rds(on), Max, Tj=25°c, (?): 0.95
• Ciss, Typ, (pf): 2800
• Qg, Typ, (nc): 83
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Notes:
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
f
S
SM
RM
d(on)
r
d(off)
rr
fs
SD
iss
oss
rss
thJC
thCK
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Test Conditions
Repetitive, pulse width limited by T
I
I
Test Conditions
V
V
Resistive Switching Times
V
R
V
V
F
F
DS
GS
GS
GS
G
GS
= I
= 25A, -di/dt = 100 A/μs, V
PRELIMINARY TECHNICAL INFORMATION
= 2Ω (External)
= 0V
S
= 10V, V
= 10V, I
= 0V, V
= 10V, V
, V
GS
= 0 V, Note 1
DS
D
DS
DS
= 0.5 • I
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
R
D
D
= 100 V
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
Min.
5,237,481
5,381,025
5,486,715
15
Characteristic Values
Characteristic Values
Min.
2800
0.21
Typ.
6,162,665
6,259,123 B1
6,306,728 B1
287
100
12
10
28
12
83
20
40
28
Typ.
0.8
7
Max.
0.25 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
300 ns
1.5
56
14 A
°C/W
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
A
V
A
S
6,683,344
6,710,405 B2
6,710,463
TO-247 (IXFH) Outline
6,727,585
6,759,692
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
IXFH14N100Q2
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
1
2
1
2
20.80
15.75
19.81
Min.
1.65
2.87
5.20
3.55
5.89
4.32
Millimeter
4.7
2.2
2.2
1.0
1
.4
7,005,734 B2 7,157,338B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
2 - Drain
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216